808nm Near Infrared(NIR) VCSEL Laser Diode Chip
Healthcare, Beauty and Skin Treatment, Consumer Electronics, LLLT, PBMT, Wearable Pulse Oximetry,Hair Removal, Laser Facial, Skin Rejuvenation, Proximity Sensing, AR/VR Sensor, Facial Recognition
808nm/3W/43Mil
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Threshold Current:TYP. 690mA
VF:Typ. 2.2V
Output Power:Typ. 3.6W
Wavelength:798nm-818nm
PCE:41%
Angle:21 deg
Die Size:1075μm*1120μm
Die Thickness:150μm
Number of Emitters:624
Bond Pad Size:100μm*1060μm*2
Suitable for pulse power applications and the power is 3W
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
808nm/2W/42Mil/CW
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Threshold Current:TYP. 400mA
VF:Typ. 2.3V(IF=2.2A)
Output Power:Typ. 2.1W
Wavelength:800nm-820nm
PCE:43%
Angle:22 deg
Die Size:995μm*1020μm
Die Thickness:150μm
Number of Emitters:410
Emitter Aperture:10μm
Bond Pad Size:100μm*855μm*2
Suitable for applications which require the CW operation with the power being around 2 W
- Qualified Sample
- Batch
- Stock
- Free Sample
808nm/2W/40Mil
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Threshold Current:TYP. 600mA
VF:Typ. 2.2V
Output Power:Typ. 2.3W
Wavelength:798nm-818nm
PCE:39%
Angle:25 deg
Die Size:995μm*1020μm
Die Thickness:150μm
Number of Emitters:410
Emitter Aperture:10μm
Bond Pad Size:100μm*855μm*2
Suitable for pulse power applications and the power is 2W
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
808nm/1.5W/34Mil
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Threshold Current:TYP. 350mA
VF:Typ. 2.2V
Output Power:Typ. 1850mW
Wavelength:800nm-820nm
PCE:35%
Angle:24 deg
Die Size:885μm*810μm
Die Thickness:150μm
Number of Emitters:280
Bond Pad Size:95μm*830μm
Suitable for pulse power applications and the power is 1.5W
25 ℃,QCW Mode (pulse length 0.1ms, 3% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
808nm/400mW
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Threshold Current:TYP. 90mA
VF:Typ. 2.5V
Output Power:Typ. 440mW
Wavelength:800nm-816nm
PCE:35%
Angle:33 deg
Die Size:1005μm*230μm
Die Thickness:130μm
Number of Emitters:22
Emitting Aperture:20μm
Bond Pad Size:972μm*114μm
Suitable for pulse power applications and the power is 400mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
808nm/200mW
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Threshold Current:TYP. 60mA
VF:Typ. 2.2V
Output Power:Typ. 240mW
Wavelength:800nm-816nm
PCE:38%
Angle:28 deg
Die Size:895μm*200μm
Die Thickness:130μm
Number of Emitters:22
Emitting Aperture:15μm
Bond Pad Size:862μm*105μm
Suitable for pulse power applications and the power is 200mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
