660nm Red Light VCSEL Laser Diode Chip
Healthcare, Beauty and Skin Treatment, Consumer Electronics, Industrial Testing, LLLT, PBMT, Pulse Oximetry, Laser Facial, Skin Rejuvenation, Proximity Sensing, AR/VR, LiDAR, Facial Recognition, Material Surface Defect Detection or Spectrometer
660nm/7mW/7Mil
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Threshold Current:TYP. 7 mA
VF:Typ. 2.6 V
Output Power:Typ. 7 mW
Wavelength:655nm-665 nm
PCE:15 %
Angle:22 deg
Die Size:163 μm*185 μm
Die Thickness:130 μm
Number of Emitters:6
Bond Pad Size:115 μm*80 μm
Suitable for pulse power applications and the power is 7mW
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
660nm/5mW/8Mil
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Threshold Current:TYP:3.2 mA
VF:Typ. 2.5 V
Output Power:Typ. 2 mW
Wavelength:658nm-660 nm
PCE:12 %
Angle:20 deg
Die Size:200 μm*200 μm
Die Thickness:130 μm
Bond Pad Size:90 μm*90 μm
Suitable for pulse power applications and the power is 2mW
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
660nm/2mW/8Mil
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Threshold Current:TYP:3.2 mA
VF:Typ. 2.5 V
Output Power:Typ. 2 mW
Wavelength:658nm-660 nm
PCE:12 %
Angle:20 deg
Die Size:200 μm*200 μm
Die Thickness:130 μm
Bond Pad Size:90 μm*90 μm
Suitable for pulse power applications and the power is 2mW
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )
- Qualified Sample
- Batch
- Stock
- Free Sample
