905nm Near Infrared(NIR) VCSEL Laser Diode Chip

Healthcare, Beauty and Skin Treatment, Consumer Electronics,LiDAR, AGV/AMR，Proximity Sensing, AR/VR Sensor, Facial Recognition

905nm/70W/17Mil

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Threshold Current:TYP. 200mA
VF:TYP. 20V(IF=15A)
Output Power:TYP. 70W
Wavelength:895nm-915nm
PCE:26%
Angle:18 deg

Die Size:370μm*450μm
Die Thickness:100μm
Number of Emitters:52
Emitting Aperture:20μm
Bond Pad Size:330μm*110μm

Suitable for pulse power applications and the power is 70W
25 ℃,QCW Mode (pulse length 5ns, 0.1% Duty Cycle )

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Threshold Current:TYP. 28mA
VF:TYP. 20V(IF=1.4A)
Output Power:TYP. 7W
Wavelength:895nm-915nm
PCE:26%
Angle:18 deg

Die Size:278μm*210μm
Die Thickness:150μm
Number of Emitters:7
Emitting Aperture:20μm
Bond Pad Size:175μm*95μm

Suitable for pulse power applications and the power is 1W
25 ℃,QCW Mode (pulse length 5ns, 0.1% Duty Cycle )

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Threshold Current:TYP. 20mA
VF:TYP. 20V(IF=11A)
Output Power:TYP. 4W
Wavelength:895nm-915nm
PCE:26%
Angle:18 deg

Die Size:180μm*180μm
Die Thickness:150μm
Number of Emitters:1
Emitting Aperture:50μm
Bond Pad Size:90μm*90μm

Suitable for pulse power applications and the power is 4W
25 ℃,QCW Mode (pulse length 5ns, 0.1% Duty Cycle )

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Threshold Current:TYP. 4mA
VF:TYP. 20V(IF=200mA)
Output Power:TYP. 1W
Wavelength:895nm-915nm
PCE:26%
Angle:18 deg

Die Size:180μm*180μm
Die Thickness:150μm
Number of Emitters:1
Emitting Aperture:20μm
Bond Pad Size:90μm*90μm

Suitable for pulse power applications and the power is 1W
25 ℃,QCW Mode (pulse length 5ns, 0.1% Duty Cycle )